ssf5508 55v n-channel mosfet www.goodark.com page 1 of 7 rev.4.2 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 110 i d @ tc = 100c continuous drain current, v gs @ 10v 80 i dm pulsed drain current 440 a power dissipation 205 w p d @tc = 25c linear derating factor 2.0 w/c v ds drain-source voltage 55 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 375 mj i ar avalanche current @ l=0.3mh 50 a t j t stg operating junction and storage temperature range -55 to +175 c v dss 55v r ds (on) 4.5mohm(typ.) i d 110a to-220 marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
ssf5508 55v n-channel mosfet www.goodark.com page 2 of 7 rev.4.2 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.73 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 v v gs = 0v, id = 250a 4.5 5.5 v gs =10v,i d = 68a r ds(on) static drain-to-source on-resistance 7 m t j = 125 2.5 3.5 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.4 v t j = 125 1 v ds = 55v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 124.7 q gs gate-to-source charge 24.46 q gd gate-to-drain("miller") charge 48.68 nc i d = 30a, v ds =30v, v gs = 10v t d(on) turn-on delay time 19.62 t r rise time 18.82 t d(off) turn-off delay time 69.76 t f fall time 30.12 ns v gs =10v, vds=30v, r l =15, r gen =2.55 c iss input capacitance 5607 c oss output capacitance 463 c rss reverse transfer capacitance 454 pf v gs = 0v v ds = 25v ? = 600khz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 110 a i sm pulsed source current (body diode) 440 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.94 1.3 v i s =68a, v gs =0v t rr reverse recovery time 37 ns q rr reverse recovery charge 60 nc t j = 25c, i f =68a, di/dt = 100a/s
ssf5508 55v n-channel mosfet www.goodark.com page 3 of 7 rev.4.2 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the maximum current rating is limited by bond-wires.
ssf5508 55v n-channel mosfet www.goodark.com page 4 of 7 rev.4.2 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature typical electrical and thermal characteristics
ssf5508 55v n-channel mosfet www.goodark.com page 5 of 7 rev.4.2 to-220 mechanical data figure 5. maximum drain current vs. case temperature figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
ssf5508 55v n-channel mosfet www.goodark.com page 6 of 7 rev.4.2 detail a option1 option2 option3 detail b (back view) detail c option1 option2 option3 option1 option2 common dimensions mm symbol min nom max a 4.3 4.57 4.7 a1 1.2 - 1.4 a2 2.2 2.4 2.9 b 0.77 - 0.9 b2 1.23 - 1.36 c 0.4 - 0.7 d 15.25 15.6 15.8 d1 8.59 9.1 9.4 e 9.66 10 10.4 e1 - 8.7 - e2 9.66 10 10.4 e 2.54bsc e1 5.08bsc h1 6.2 6.5 6.7 l 12.6 - 14.27 l1 - - 3.95 p 3.5 3.6 3.9 q 2.65 2.8 2.95 1 1 3 5 2 1 3 5 a1 - 1.8 - a2 - 3.0 - d1 - 2.0 - d2 - 7.6 - f1 - 1.4 - f2 - 1.5 - f3 - 1.0 - g1 - 2.8 -
ssf5508 55v n-channel mosfet www.goodark.com page 7 of 7 rev.4.2 ordering and marking information device marking: ssf5508 package (available) to220 operating temperature range c : -55 to 175 oc devices per unit packag e type units/tu be tubes/inner box units/inner box inner boxes/carton box units/carton box to220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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